Batteries & Chargers
Description
Original Transistor 2SK1305 Silicon N Channel MOS FET IC Components
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Original Transistor 2SK1305 Silicon N Channel MOS FET TO-3P
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Features
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? Low on-resistance
? High speed switching
? Low drive current
? 4 V gate drive device ? Can be driven from 5 V source
? Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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Outline
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Absolute Maximum Ratings
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Item | Symbol | Rating | Unit |
Drain to source voltage | VDSS | 100 | V |
Gate to source voltage | VGSS | ±20 | V |
Drain current | ID | 10 | A |
Drain peak current | ID(pulse)*1 | 40 | A |
Body to drain diode reverse drain current | IDR | 10 | A |
Channel dissipation | Pch*2 | 25 | W |
Channel temperature | Tch | 150 | °C |
Storage temperature | Tstg | -50 to +150 | °C |
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Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at TC = 25°C
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Anterwell Technology co.,Ltd
Integrated Circuit Chip,Programmable IC Chips,Circuit Board Chips
Address: B-9P Duhui 100 Building Futian District, Shenzhen,China,
Shenzhen, Guangdong
China, 518000
Tel: 86-755-61352205
Fax: 86-755-61352206
